ILD205T(2004) データシートの表示（PDF） - Vishay Semiconductors
部品番号
コンポーネント説明
メーカー
ILD205T
(Rev.:2004)
(Rev.:2004)
Vishay Semiconductors
ILD205T Datasheet PDF : 7 Pages
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ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Peak reverse voltage
Test condition
Peak pulsed current
Continuous forward current per
channel
Power dissipation
1.0 µs, 300 pps
Derate linearly from 25 °C
Symbol
VR
Pdiss
Value
6.0
1.0
30
50
0.66
Unit
V
A
mA
mW
mW/°C
Output
Parameter
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Power dissipation per channel
Derate linearly from 25 °C
Test condition
Symbol
BVCEO
BVECO
Pdiss
Value
70
7.0
125
1.67
Unit
V
V
mW
mW/°C
Coupler
Parameter
Total package dissipation
ambient (2 LEDs + 2 detectors,
2 channels)
Derate linearly from 25 °C
Storage temperature
Operating temperature
Soldering time from 260 °C
Test condition
Symbol
Ptot
Tstg
Tamb
Tsld
Value
300
4.0
- 55 to + 150
- 55 to + 100
10
Unit
mW
mW/°C
°C
°C
sec.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reverse current
Capacitance
Test condition
IF = 10 mA
VR = 6.0 V
VR = 0
Symbol
Min
Typ.
Max
Unit
VF
1.2
1.55
V
IR
0.1
100
µA
CO
25
pF
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Document Number 83647
Rev. 1.4, 26-Oct-04
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