NDH854P データシートの表示（PDF） - Fairchild Semiconductor
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NDH854P Datasheet PDF : 8 Pages
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Typical Electrical Characteristics
-20
V = -10V
GS
-6.0
-15
-5.0
-4.5
-4.0
-3.5
-10
-3.0
-5
-2.5
0
0
-1
-2
-3
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
ID = -5.1A
1.4 V GS = -10V
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
150
TJ , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation with
Temperature.
-25
V = -5V
DS
-20
TJ
=-55°C
25°C
125°C
-15
-10
-5
0
-1
-1.5
-2
-2.5
-3
-3.5
-4
-4.5
-5
V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 5. Transfer Characteristics.
2.5
VGS = -3.5 V
2
-4.0
-4.5
-5.0
1.5
-5.5
-6.0
-7.0
-10
1
0.5
0
-5
-10
-15
-20
I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
2
VGS = -10V
1.5
1
0.5
TJ = 125°C
25°C
-55°C
0
0
-5
-10
-15
-20
I , DRAIN CURRENT (A)
D
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
1.2
1.1
1
0.9
0.8
0.7
0.6
-50
-25
VDS = V GS
I D = -250µA
0
25
50
75
100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 6. Gate Threshold Variation with
Temperature.
NDH854P Rev.D
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