NGTB30N120FL2WG データシートの表示（PDF） - ON Semiconductor
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NGTB30N120FL2WG Datasheet PDF : 8 Pages
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NGTB30N120FL2WG
TYPICAL CHARACTERISTICS
9
8
VCE = 600 V
VGE = 15 V
7 TJ = 150°C
IC = 30 A
Eon
6
5
4
3
Eoff
2
1
0
5
15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
10000
1000
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 30 A
tf
td(on)
100
td(off)
tr
10
5
15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W)
Figure 14. Switching Time vs. Rg
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
350
Eon
Eoff
VGE = 15 V
TJ = 150°C
IC = 30 A
Rg = 10 W
400 450 500 550 600 650 700 750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
1000
100
td(off)
tf
td(on)
tr
10
350
VGE = 15 V
TJ = 150°C
IC = 30 A
Rg = 10 W
400 450 500 550 600 650 700 750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Switching Time vs. VCE
1000
1000
100
50 ms
10
dc operation
100 ms
1
Single Nonrepetitive
Pulse TC = 25°C
0.1 Curves must be derated
linearly with increase
in temperature
0.01
1
10
100
1 ms
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
10000
100
10
VGE = 15 V, TC = 125°C
1
1
10
100
1000
10000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
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