1PS76SB10 データシートの表示（PDF） - Philips Electronics

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1PS76SB10

Schottky barrier diode

Philips Electronics 

Philips Semiconductors

Schottky barrier diode

ELECTRICAL CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

forward voltage

IR

reverse current

Cd

diode capacitance

Note

1. Pulsed test: tp = 300 µs; δ = 0.02.

CONDITIONS

see Fig.2

IF = 0.1 mA

IF = 1 mA

IF = 10 mA

IF = 30 mA

IF = 100 mA

VR = 25 V; note 1; see Fig.3

f = 1 MHz; VR = 1 V; see Fig.4

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient

Note

1. Refer to SOD323 standard mounting conditions.

note 1

CONDITIONS

Product specification

1PS76SB10

MAX.

UNIT

240

mV

320

mV

400

mV

500

mV

800

mV

2

µA

10

pF

VALUE

450

UNIT

K/W

1996 Oct 14

3

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