2SC3182 データシートの表示（PDF） - Inchange Semiconductor
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2SC3182 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3182
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
140
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A
VBE(on) Base-Emitter On Voltage
IC= 5A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 140V; IE= 0
2.0 V
1.5 V
5 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
5 μA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
55
160
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
35
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
220
pF
30
MHz
hFE-1 Classifications
R
O
55-110 80-160
isc Website：www.iscsemi.cn
2
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