AOK22N50 データシートの表示（PDF） - Alpha and Omega Semiconductor

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AOK22N50

500V,22A N-Channel MOSFET

Alpha and Omega Semiconductor 

AOK22N50

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V, TJ=25°C

ID=250µA, VGS=0V, TJ=150°C

BVDSS

/∆TJ

Zero Gate Voltage Drain Current

ID=250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=500V, VGS=0V

VDS=400V, TJ=125°C

IGSS

Gate-Body leakage current

VDS=0V, VGS=±30V

VGS(th) Gate Threshold Voltage

VDS=5V ID=250µA

RDS(ON) Static Drain-Source On-Resistance

VGS=10V, ID=11A

gFS

Forward Transconductance

VDS=40V, ID=11A

VSD

Diode Forward Voltage

IS=1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

ISM

Maximum Body-Diode Pulsed Current

500

600

V

0.57

V/ oC

1

µA

10

±100 nΑ

3.4

4

4.5

V

0.21 0.26 Ω

25

S

0.7

1

V

22

A

88

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=25V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

2465 3086 3710 pF

200 290 380 pF

14 24 35 pF

0.7 1.4 2.1

Ω

SWITCHING PARAMETERS

Qg

Total Gate Charge

Qgs

Gate Source Charge

VGS=10V, VDS=400V, ID=22A

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

tD(off)

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=250V, ID=22A,

RG=25Ω

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time IF=22A,dI/dt=100A/µs,VDS=100V

Qrr

Body Diode Reverse Recovery Charge IF=22A,dI/dt=100A/µs,VDS=100V

55 69 83 nC

17 22 27 nC

12 24 36 nC

60

ns

122

ns

124

ns

77

ns

415 524 630 ns

7.5 9.6 12 µC

A. The value of R θJA is measured with the device in a still air environment with T A =25°C.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial

TJ =25°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

G. L=60mH, IAS=7A, VDD=150V, RG=25Ω, Starting TJ=25°C

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev0: Nov 2011

www.aosmd.com

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