GW30NC120HD データシートの表示（PDF） - STMicroelectronics

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GW30NC120HD

N-channel 1200V - 30A - TO-247 very fast PowerMESH™ IGBT

STMicroelectronics 

STGW30NC120HD

N-channel 1200V - 30A - TO-247

very fast PowerMESH™ IGBT

Features

Type

VCES

STGW30NC120HD 1200V

VCE(sat)

@25°C

< 2.75V

IC

@100°C

30A

■ Low on-losses

■ Low on-voltage drop (Vcesat)

■ High current capability

■ High input impedance (voltage driven)

■ Low gate charge

■ Ideal for soft switching application

Application

■ Induction heating

Description

Using the latest high voltage technology based on

its patented strip layout, STMicroelectronics has

designed an advanced family of IGBTs, with

outstanding performances. The suffix “H”

identifies a family optimized for high frequency

application in order to achieve very high switching

performances (reduced tfall) maintaining a low

voltage drop.

3

2

1

TO-247

Figure 1. Internal schematic diagram

Table 1. Device summary

Order code

Marking

STGW30NC120HD

GW30NC120HD

Package

TO-247

Packaging

Tube

October 2007

Rev 9

1/13

www.st.com

13

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