MJ16016 データシートの表示（PDF） - New Jersey Semiconductor

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MJ16016

Silicon NPN Power Transistor

New Jersey Semiconductor 

Silicon NPN Power Transistor

MJ16016

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VcEO(SUS) Collector-Emitter Sustaining Voltage lc=100mA;lB=0

450

V

VcE(sat)-1 Collector-Emitter Saturation Voltage lc= 10A; IB= 1A

VCE(sat)-2

VeE(sat)

ICEV

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Collector Cutoff Current

IC=15A;IB=1.5A

lc=15A;lB=1.5A,Tc=10CrC

lc=15A; IB=1.5A

lc=15A; IB=1.5A,TC=100'C

VcEv=850V;VBE(off)=1 -5V

VCEv=850V;VBE(offr1.5V;Tc=100'C

ICER

Collector Cutoff Current

VCE= 850V; RBE= 50 Q ,TC= 100"C

2.5

V

3.0

3.0

V

1.5

1.5

V

0.25

1.5

mA

2.5 mA

IEBO

Emitter Cutoff Current

VEB= 6V; lc=0

1.0 mA

hpE

DC Current Gain

lc= 20A ; VCE= 5V

7

COB

Output Capacitance

IE=0; VCB=10V;ftest=1.0kHz

500 PF

Switching times;Resistive Load

td

Delay Time

20

50

ns

tr

Rise Time

ts

Storage Time

tf

Fall Time

lc= 15A , VCC= 250V, RB2= 1 -6 Q

Ir,,,— 1 RA-tr,.,— **A P\A/— "^fiii c

Duty Cycle=£2.0%

200 500 ns

900 2200 ns

100 250 ns

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