C4582 データシートの表示（PDF） - Inchange Semiconductor
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C4582 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=7.5A;IB=1.5 A
VBEsat Base-emitter saturation voltage
IC=7.5A;IB=1.5 A
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A;IB=0
IEBO
Emitter cut-off current
ICBO
Collector cut-off current
ICEO
Collector cut-off current
At rated voltage
At rated voltage
hFE-1
DC current gain
IC=7.5 A ; VCE=5V
hFE-2
DC current gain
IC=1mA ; VCE=5V
fT
Transition frequency
IC=1.5A ; VCE=10V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=7.5A;RL=20Ω
IB1=1.5A; IB2=3A
VBB2=4V
Product Specification
2SC4582
MIN TYP. MAX UNIT
1.0
V
1.5
V
450
V
0.1
mA
0.1
mA
10
5
20
MHz
0.5
μs
2.0
μs
0.2
μs
2
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