2SB1237TV2P データシートの表示（PDF） - ROHM Semiconductor
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2SB1237TV2P Datasheet PDF : 4 Pages
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2SA1515S / 2SB1237
Packaging specifications and hFE
Package
Code
Type
hFE Basic ordering unit (pieces)
2SA1515S QR
2SB1237 QR
hFE values are classified as follows :
Item
Q
R
hFE
120 to 270 180 to 390
Taping
TP
TU2
5000
2500
−
−
Electrical characteristics curves
-500
VCE= −6V
-200
-100 Ta=100 C
25 C
-50
−55 C
-20
-10
-5
-2
-1
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter
propagation characteristics
−500 −3.0
−3.5
−4.0
−400 −4.5
−5.0
−300
Ta=25 C
−2.5
−2.0
−1.5
−200
−1.0
−100
−0.5
0
IB=0mA
0
−0.4 −0.8 −1.2 −1.6 −2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics
1000
VCE= −3V
500
Ta=100 C
25 C
200
−55 C
100
50
−1 −2 −5 −10 −20 −50 −100 −200 −500−1000
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current(ΙΙ)
Ta=25 C
VCE= −5V
200
100
50
20
−1 −2
−5 −10 −20 −50 −100
EMITTER CURRENT : IE (mA)
Fig.7 Gain bandwidth product
vs. emitter current
−1 Ta=25 C
IC/IB=10
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01−1 −2 −5 −10 −20 −50 −100 −200 −500 −1000−2000
COLLECTOR CURRENT : IC (mA)
Fig.5 Collector-emitter saturation
voltage vs. collector current
100
Ta=25 C
f=1MHz
IE=0A
50
20
10
−0.5 −1 −2
−5 −10 −20
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Collector output capacitance
vs.collector-base voltage
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Data Sheet
1000
Ta=25 C
500
VCE= −3V
−1V
200
100
50
−1 −2
−5 −10 −20 −50 −100 −200 −500−1000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs.
collector current(Ι)
−1.0
Ta=25 C
−0.8
−0.6
lC= −500mA
−0.4
−0.2
lC= −300mA
0
−1 −2
−5 −10 −20 −50 −100
BASE CURRENT : IB (mA)
Fig.6 Collector-emitter saturation
voltage vs. base current
−5
−2
−1
−0.5
−0.2
−0.1
−0.05
IC Max.∗
PW =10ms∗
PW =100ms∗
DC
Ta=25 C
∗Single pulse
−0.02
−0.01
−0.1 −0.2 −0.5 −1 −2
−5 −10 −20 −50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operation area
(2SB1237)
2010.04 - Rev.D
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