SVF12N60F データシートの表示（PDF） - Silan Microelectronics
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SVF12N60F Datasheet PDF : 9 Pages
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SVF12N60T/F/FG/S/K_Datasheet
12A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF12N60T/F/FG/S/K is an N-channel enhancement mode
power MOS field effect transistor which is produced using Silan
proprietary F-CellTM structure VDMOS technology. The
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 12A,600V,RDS(on)(typ)=0.58Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF12N60T
SVF12N60F
SVF12N60FG
SVF12N60S
SVF12N60STR
SVF12N60K
Package
TO-220-3L
TO-220F-3L
TO-220F-3L
TO-263-2L
TO-263-2L
TO-262-3L
Marking
SVF12N60T
SVF12N60F
SVF12N60FG
SVF12N60S
SVF12N60S
SVF12N60K
Material
Pb free
Pb free
Halogen free
Pb free
Pb free
Pb free
Packing
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HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.5
2012.08.23
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