2SA1940 データシートの表示（PDF） - Toshiba
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2SA1940 Datasheet PDF : 4 Pages
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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1940
Power Amplifier Applications
2SA1940
Unit: mm
• Complementary to 2SC5197
• Recommended for 55-W high-fidelity audio frequency amplifier
output stage
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
VCBO
−120
V
VCEO
−120
V
VEBO
−5
V
IC
−8
A
IB
−0.8
A
PC
80
W
Junction temperature
Storage temperature range
Tj
150
°C
JEDEC
―
Tstg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-16C1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 4.7 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09
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