2SK3349 データシートの表示（PDF） - Hitachi -> Renesas Electronics

部品番号

コンポーネント説明

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2SK3349

Silicon N Channel MOS FET High Speed Switching

Hitachi -> Renesas Electronics 

2SK3349

Silicon N Channel MOS FET

High Speed Switching

Features

• Low on-resistance

RDS = 2.8 Ω typ. (at VGS = 4 V , ID = 25 mA)

RDS = 4.8 Ω typ. (at VGS = 2.5 V , ID = 10 mA)

• 2.5 V gate drive device

• Small package (SMPAK)

Outline

SMPAK

D

3

1

2

ADE-208-804 (Z)

1st.Edition.

June 1999

G

S

1. Source

2. Gate

3. Drain

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