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2SK3349 データシートの表示(PDF) - Hitachi -> Renesas Electronics
部品番号
コンポーネント説明
メーカー
2SK3349
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
2SK3349 Datasheet PDF : 8 Pages
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2SK3349
Typical Capacitance
vs. Drain to Source Voltage
10
Ciss
Coss
Crss
1.0
0.1
0
4
8
12
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
16 20
V
DS
(V)
10000
Switching Characteristics
1000
100
tr
tf
t
d(off)
t
d(on)
10
0.01
V
GS
= 2.5 V, V
DD
= 10 V
PW = 5 µs, duty < 1 %
0.02
0.05
0.1
Drain Current I
D
(A)
Reverse Drain Current
vs. Source to Drain Voltage
0.2
10 V
0.16
V
GS
= 0,-5V
5V
0.12
0.08
0.04
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V
SD
(V)
5
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