L2N7002KDW1T1G(2016) データシートの表示（PDF） - Leshan Radio Company,Ltd

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L2N7002KDW1T1G
(Rev.:2016)

Small Signal MOSFET 380 mAmps, 60 Volts N–Channel SC-88

Leshan Radio Company,Ltd 

L2N7002KDW1T1G, S-L2N7002KDW1T1G

Small Signal MOSFET

5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)

OFF CHARACTERISTICS

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Drain–Source Breakdown Voltage

(VGS = 0, ID = 250μAdc)

VBRDSS

60

-

Vdc

-

Drain−to−Source Breakdown Voltage

Temperature Coefficient

mV/ºC

VBRDSS/TJ

-

71

-

Zero Gate Voltage Drain Current TJ = 25°C

-

-

1.0

μAdc

(VGS = 0, VDS = 60 Vdc)

TJ = 125°C IDSS

500

(VGS = 0, VDS = 50 Vdc)

TJ = 25°C

-

-

100

nAdc

Gate–Body Leakage Current, Forward

(VGS = 20 Vdc)

IGSSF

-

μAdc

-

10

Gate–Body Leakage Current, Reverse

(VGS = - 20 Vdc)

IGSSR

-

μAdc

-

-10

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

(VDS = VGS, ID = 250μAdc)

Negative Threshold Temperature Coefficient

VGS(th)

1.0

VGS(TH)/TJ -

Vdc

-

2.5

4

-

mV/ºC

Static Drain–Source On–State Resistance

RDS(on)

Ω

(VGS = 10 Vdc, ID = 500 mAdc)

-

-

2.3

(VGS = 5.0 Vdc, ID = 50 mAdc)

-

-

2.7

Forward Transconductance

(VDS = 5.0 Vdc, ID = 200 mAdc)

gfs

80

-

mS

-

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Ciss

pF

-

34

-

Output Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

pF

Coss

-

3

-

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

pF

Crss

-

2.2

-

SWITCHING CHARACTERISTICS

Turn-On Delay Time

td(on)

-

3.8

-

ns

Rise Time

VDS = 10 V, VGEN = 10 V,

tr

-

3.4

-

Turn-Off Delay Time

ID = 500 mA

td(off)

-

19

-

Fall Time

tf

-

12

-

BODY–DRAIN DIODE RATINGS

Diode Forward On–Voltage

(IS = 115 mAdc, VGS = 0 V)

TJ = 25°C

-

-

1.4

Vdc

VSD

TJ = 85°C

-

0.7

-

2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%.

Leshan Radio Company, LTD.

Rev.F Mar 2016

2/6

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