MTP60N06HD データシートの表示（PDF） - ON Semiconductor
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MTP60N06HD Datasheet PDF : 8 Pages
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MTP60N06HD
TYPICAL ELECTRICAL CHARACTERISTICS
120
VGS = 10 V
100
80
60
8V
9V
7V
TJ = 25°C
6V
40
20
5V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS, DRAIN-TO-SOURCE VOLTAGE (Volts)
Figure 1. On–Region Characteristics
120
VDS ≥ 10 V
100
80
60
40
20
100°C
25°C
TJ = -Ă55°C
0
2.0 2.8
3.6 4.4
5.2 6.0
6.8 7.6
VGS, GATE-TO-SOURCE VOLTAGE (Volts)
Figure 2. Transfer Characteristics
0.020
0.018
VGS = 10 V
0.016
TJ = 100°C
0.014
0.012
25°C
0.010
0.008
-Ă55°C
0.006
0 10 20 30 40 50 60 70 80 90 100 110 120
ID, DRAIN CURRENT (Amps)
Figure 3. On–Resistance versus Drain Current
and Temperature
0.0132
0.0128
TJ = 25°C
0.0124
0.0120
0.0116
VGS = 10 V
0.0112
0.0108
0.0104
15 V
0.0100
0 10 20 30 40 50 60 70 80 90 100 110 120
ID, DRAIN CURRENT (Amps)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.8
VGS = 10 V
1.6
ID = 30 A
1.4
1.2
1.0
1000
VGS = 0 V
100
10
TJ = 125°C
100°C
25°C
0.8
0.6
-Ă50 -Ă25
0 25 50 75 100
TJ, JUNCTION TEMPERATURE (°C)
125 150
Figure 5. On–Resistance Variation with
Temperature
1
0
10
20
30
40
50
60
VDS, DRAIN-TO-SOURCE VOLTAGE (Volts)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
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