2SB1230 データシートの表示（PDF） - Quanzhou Jinmei Electronic

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2SB1230

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-5mA;RBE=∞

V(BR)CBO Collector-base breakdown voltage

IC=-1mA; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=-6A; IB=-0.6A

VBE sat Base-emitter saturation voltage

IC=-6A; IB=-0.6A

ICBO

Collector cut-off current

VCB=-100V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-1.5A ; VCE=-2V

hFE-2

DC current gain

IC=-6A ; VCE=-2V

‹ hFE-1 Classifications

P

Q

50-100

70-140

Product Specification

2SB1230

MIN TYP. MAX UNIT

-100

V

-110

V

-6

V

-0.8

V

-1.5

V

-100 μA

-100 μA

50

140

20

2

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