HAF1001 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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HAF1001

Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut–down Capability

Hitachi -> Renesas Electronics 

HAF1001

Silicon P Channel MOS FET Series

Power Switching / Over Temperature Shut–down Capability

ADE-208-583 A (Z)

2nd Edition

October 1997

Features

This FET has the over temperature shut–down capability sensing to the junction temperature.

This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit

operation to shut–down the gate voltage in case of high junction temperature like applying over power

consumption, over current etc.

• Logic level operation (–4 to –6 V Gate drive)

• High endurance capability against to the short circuit

• Built–in the over temperature shut–down circuit

• Latch type shut–down operation (Need 0 voltage recovery)

Outline

TO–220AB

D

4

G

Gate resistor

Tempe–

rature

Sencing

Circuit

Latch

Circuit

Gate

Shut–

down

Circuit

S

1

2

3

1. Gate

2. Drain

3. Source

4. Drain

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