MJH16018 データシートの表示（PDF） - Inchange Semiconductor
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MJH16018 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Voltage-
: VCEO(SUS)= 800V(Min)
·Fast Turn-Off Time
APPLICATIONS
Designed for high-voltage, high-speed , power switching in
inductive circuits where fall time is critical. They are particu-
larly suited for line operated switchmode applications as:
·Switching Regulators
·Inverters
·Solenoids
·Relay Drivers
·Motor Controls
·Deflection Circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
1500
V
VCEO(SUS) Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IBB
Base Current-Continuous
8
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
@TC=25℃
Collector Power Dissipation
@TC=100℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
12
A
150
W
50
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R(th)j-c Thermal Resistance,Junction to Case 1.0 ℃/W
isc Product Specification
MJH16018
isc Website：www.iscsemi.cn
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