2N4030 データシートの表示（PDF） - Comset Semiconductors
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2N4030 Datasheet PDF : 4 Pages
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PNP 2N4030 – 2N4031 – 2N4032 – 2N4033
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
hFE (*)
fT
CEBO
CCBO
tS
tf
ton
-IC = 100 µA, -VCE = 5 V
2N4030
2N4031
30
2N4032
2N4033
75
-
-
-
-
-IC = 100 mA, -VCE = 5V
2N4030
2N4031
40
2N4032
2N4033
100
-
-
120
300
DC Current Gain
-IC = 500 mA, -VCE = 5V
2N4030
2N4031
25
2N4032
2N4033
70
-
-
-
-
-
2N4030 15 -
-
-IC = 1 A, -VCE = 5 V
2N4031 10 -
-
2N4032 40 -
-
2N4033 25 -
-
-IC = 100 mA, -VCE = 5V
2N4030
2N4031
15
-
-
Tamb = -55°c
2N4032
2N4033
40
-
-
Transition
Frequency
-IC = 50 mA, -VCE = 10 V
f = 100 MHZ
2N4030
2N4031
100
2N4032
2N4033
150
-
-
400
MHZ
500
Emitter – base
Capacitance
IC = 0, -VEB = 0.5 V
f = 1 MHZ
-
- 110 pF
Collector – base
Capacitance
IE = 0, -VCB = 10V
f = 1 MHZ
-
- 20 pF
Storage times
-IC =500 mA, -VCC = 30V
-IB1 = -IB1 = 50 mA
-
- 350 ns
Fall times
-IC =500 mA, -VCC = 30V
-IB1 = -IB1 = 50 mA
-
- 50 ns
Turn-on times
-IC =500 mA, -VCC = 30V
-IB1 = -IB1 = 50 mA
-
- 100 ns
(*) Pulsed : pulse duration = 300µs, duty cycle = 1%
17/10/2012
COMSET SEMICONDUCTORS
3/4
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