AC CHARACTERISTICS WRITE CYCLE (Pre/Post-Radiation)*
-40C to +105C (VDD = 5.0V + 10% for (W) screening)
SYMBOL
PARAMETER
tAVAV1
Write cycle time
tETWH
Device Enable to end of write
tAVET
Address setup time for write (En - controlled)
tAVWL
Address setup time for write (Wn - controlled)
tWLWH
tWHAX
Write pulse width
Address hold time for write (Wn - controlled)
tEFAX
Address hold time for Device Enable (En - controlled)
tWLQZ2
Wn - controlled three-state time
tWHQX2
Wn - controlled Output Enable time
tETEF
Device Enable pulse width (En - controlled)
tDVWH
Data setup time
tWHDX
Data hold time
tWLEF
Device Enable controlled write pulse width
tDVEF
Data setup time
tEFDX
Data hold time
tAVWH
Address valid to end of write
tWHWL1
Write disable time
Notes:
* Post-radiation performance guaranteed at 25C per MIL-STD-883 Method 1019.
1. Functional test performed with outputs disabled (G high).
2. Three-state is defined as 500mV change from steady-state output voltage.
MIN
25
20
1
0
20
0
0
5
20
15
2
20
15
2
20
5
MAX
10
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
8