BST61 データシートの表示（PDF） - NXP Semiconductors.
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BST61 Datasheet PDF : 8 Pages
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NXP Semiconductors
PNP Darlington transistors
Product data sheet
BST60; BST61; BST62
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCES
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
BST60
BST61
BST62
collector-emitter voltage
BST60
BST61
BST62
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
ambient temperature
CONDITIONS
open emitter
VBE = 0 V
open collector
Tamb ≤ 25 °C; note 1
MIN. MAX. UNIT
−
−60
V
−
−80
V
−
−90
V
−
−45
V
−
−60
V
−
−80
V
−
−5
V
−
−1
A
−
−2
A
−
−100 mA
−
1.3
W
−65
+150 °C
−
150
°C
−65
+150 °C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
Rth(j-s)
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
96
K/W
16
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
2004 Dec 09
3
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