LM317 データシートの表示（PDF） - Jiangsu High diode Semiconductor Co., Ltd
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LM317 Datasheet PDF : 3 Pages
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Electrical Characteristics (TA=25℃ unless otherwise noted)
Symbol
VI-VO
TLEAD
PD
TJ
Tstg
ΔVO /ΔT
Parameter
Input-Output Voltage Differential
Lead Temperature
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Temperature Coefficient of Output Voltage
Value
40
230
Internally limited
0~125
-55~125
±0.02
Units
V
℃
W
℃
%/℃
Electrical Characteristics (TA=25℃ unless otherwise noted)
(VO-VI=5V,IO=0.5A,0℃≤TJ≤+125℃,IMAX=1.5A,PDMAX=20W,unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP MAX
UNIT
Line Regulation(note1)
Rline
Load Regulation(note1)
Rload
Adjustable Pin Current
Adjustable Pin Current Change
Reference Voltage
Temperature Stability
Minimum Load Current to Maintain
Regulation
Maximum Output Current
RMS Noise,% of VOUT
Ripple Rejection
lADJ
ΔlADJ
VREF
STT
IL(MIN)
IO(MAX)
eN
RR
Long-Term Stability,TJ=THIGH
Thermal Resistance Junction to case
ST
RθJC
TA=25℃
3V≤VI-VO≤40V
3V≤VI-VO≤40V
TA=25℃, 10mA≤IO≤IMAX
VO<5V
VO≥5V
10mA≤IO≤IMAX
VO<5V
VO≥5V
-
3V≤VI-VO≤40V
10mA≤IO≤IMAX, PD≤PMAX
3V≤VIN-VO≤40V
10mA≤IO≤IMAX, PD≤PMAX
-
VI-VO=40V
VI-VO≤15V, PD≤PMAX
VI-VO≤40V, PD≤PMAX
TA=25℃
TA=25℃,10Hz≤f≤10KHz
VO=10V, f =120Hz
without CADJ
CADJ=10µF(note2)
TA=25℃ for end point
mesasurements,1000HR
-
0.01 0.04
0.02 0.07
18
25
0.4
0.5
40
70
0.8
1.5
46
100
2.0
5
1.20 1.25 1.30
0.7
3.5
12
1.0 2.2
0.3
0.003 0.01
66
60
75
0.3
1
5
%/V
mV
%VO
µA
V
%/ VO
mA
A
%/ VO
dB
%
℃/W
Notes:
1. Load and line regulation are specified at constant junction temperature. Change in VD due to heating effects must
be taken into account separately. Pulse testing with low duty is used.(PMAX=20W)
2.CADJ. when used, is connected between the adjustment pin and ground.
High Diode Semiconductor
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