BD241A データシートの表示（PDF） - Comset Semiconductors

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BD241A

MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS.

Comset Semiconductors 

NPN BD241 – A – B – C

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

VCE=30 V

BD241

ICEO

Collector Cutoff Current

VCE=30 V

VCE=60 V

BD241A

BD241B

VCE=60 V

BD241C

BD241

IEBO

Emitter Cutoff Current

VBE=5 V

BD241A

BD241B

BD241C

VCE=55 V

BD241

ICES

Collector Cutoff Current

(VBE = 0)

VCE=70 V

VCE=90 V

BD241A

BD241B

VCE=115 V

BD241C

BD241

VCEO(sus)

Collector-Emitter

Voltage (IB = 0) (*)

Sustaining

IC =30mA

BD241A

BD241B

BD241C

BD241

VCE=4 V, IC=1 A

BD241A

BD241B

hFE

DC Current Gain (*)

BD241C

BD241

VCE=4 V, IC=3 A

BD241A

BD241B

BD241C

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

BD241

IC=3 A, IB=0.6 A

BD241A

BD241B

BD241C

BD241

VBE(on)

Base-Emitter Voltage (*)

VCE=4 V, IC=3 A

BD241A

BD241B

BD241C

BD241

VCE=10 V

IC=0.5 A

f = 1KHz

BD241A

BD241B

hfe

Small Signal Current Gain

VCE=10 V

IC=0.5 A

f = 1MHz

BD241C

BD241

BD241A

BD241B

BD241C

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

Min Typ Max Unit

-

-

-

-

-

-

0.3 mA

-

-

-

-

-

-

-

-

1.0 mA

-

-

-

-

-

-

-

-

0.2 mA

-

-

45

60

80

V

100

25

-

-

-

10

-

-

-

- 1.2 V

-

- 1.8 V

20

-

-

3

-

-

-

23/10/2012

COMSET SEMICONDUCTORS

2/3

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