BYT230PIV-1000 データシートの表示（PDF） - STMicroelectronics
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BYT230PIV-1000 Datasheet PDF : 5 Pages
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BYT230PIV-1000 / BYT231PIV-1000
THERMAL RESISTANCES
Symbol
Rth(j-c) Junction to case
Rth(c)
Parameter
Per diode
Total
Coupling
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
VF * Forward voltage drop
IR ** Reverse leakage
current
Pulse test : * tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
Test Conditions
Tj = 25°C
IF = 30 A
Tj = 100°C
Tj = 25°C
VR = VRRM
Tj = 100°C
To evaluate the conduction losses use the following equation:
P = 1.47 x IF(AV) + 0.010 IF2(RMS)
Value
1.5
0.8
0.1
Unit
°C/W
Min. Typ. Max. Unit
1.9
V
1.8
100 µA
5
mA
RECOVERY CHARACTERISTICS (per diode)
Symbol
trr
Tj = 25°C
Test Conditions
IF = 1A VR = 30V dIF/dt = - 15A/µs
IF = 0.5A IR = 1A Irr = 0.25A
Min. Typ. Max. Unit
165 ns
80
TURN-OFF SWITCHING CHARACTERISTICS (per diode)
Symbol
tIRM
IRM
Parameter
Maximum reverse
recovery time
Maximum reverse
recovery current
C = VRP
VCC
Turn-off overvoltage
co ef f icien t
Test Conditions
dIF/dt = - 120 A/µs
dIF/dt = - 240 A/µs
dIF/dt = - 120 A/µs
dIF/dt = - 240 A/µs
VCC = 200 V
IF = 30 A
Lp ≤ 0.05 µH
Tj = 100°C
(see fig. 11)
Tj = 100°C VCC = 200V IF = IF(AV)
dIF/dt = - 30A/µs Lp = 5µH
(see fig. 12)
Min. Typ. Max. Unit
200 ns
120
19.5 A
22
4.5 /
2/5
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