BAS86 データシートの表示（PDF） - Philips Electronics

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BAS86

Schottky barrier diode

Philips Electronics 

Philips Semiconductors

Schottky barrier diode

Product specification

BAS86

ELECTRICAL CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

forward voltage

IR

reverse current

trr

reverse recovery time

Cd

diode capacitance

Note

1. Pulsed test: tp = 300 µs; δ = 0.02.

CONDITIONS

see Fig.3

IF = 0.1 mA

IF = 1 mA

IF = 10 mA

IF = 30 mA

IF = 100 mA

VR = 40 V; see Fig.4; note 1

when switched from IF = 10 mA to IR = 10 mA;

RL = 100 Ω; measured at IR = 1 mA; see Fig.6

f = 1 MHz; VR = 1 V; see Fig.5

MAX. UNIT

300

mV

380

mV

450

mV

600

mV

900

mV

5

µA

4

ns

8

pF

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient note 1

Note

1. Refer to SOD80 standard mounting conditions.

CONDITIONS

VALUE

320

UNIT

K/W

1996 Oct 01

3

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