IRF630NS データシートの表示（PDF） - Fairchild Semiconductor
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IRF630NS Datasheet PDF : 11 Pages
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Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
IDSS
IGSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
200
Zero Gate Voltage Drain Current
VDS = 200V
VGS = 0V
-
VDS = 160V
TC = 150o
-
Gate to Source Leakage Current
VGS = ±20V
-
On Characteristics
VGS(TH)
rDS(ON)
gfs
Gate to Source Threshold Voltage
Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
2
ID = 5.4A, VGS = 10V
-
VDS = 50V, ID = 5.4A (Note 2) 49
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(10)
Qg(TH)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 20V
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
-
VDS = 25V, VGS = 0V,
f = 1MHz
-
-
VGS = 0V to
20V
VGS = 0V to
10V
VDD = 100V
ID = 11A
-
VGS = 0V to 2V Ig = 1.0mA
-
-
-
Switching Characteristics (VGS = 10V)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
-
-
VDD = 100V, ID = 5.4A
-
VGS = 10V, RGS = 13Ω
-
-
-
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovered Charge
Notes:
1: Starting TJ = 25°C, L = 6.5mH, IAS = 5.4A.
2: Pulse width ≤ 400µs; duty cycle ≤ 2%.`
ISD = 5.4A
-
ISD = 5.4A, dISD/dt = 100A/µs -
ISD = 5.4A, dISD/dt = 100A/µs -
Typ Max Units
-
-
V
-
25
µA
-
250
-
±100 nA
-
4
V
0.200 0.300 Ω
-
-
S
1030
-
pF
120
-
pF
50
-
pF
59
78
nC
32
42
nC
2.0
3.2
nC
4.0
-
nC
11
-
nC
-
32
ns
9
-
ns
12
-
ns
71
-
ns
19
-
ns
-
135
ns
-
1.3
V
-
176
ns
-
813 nC
©2002 Fairchild Semiconductor Corporation
Rev. B
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