2SB1386T100_07 データシートの表示（PDF） - ROHM Semiconductor

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2SB1386T100_07

Low frequency transistor (−20V, −5A)

ROHM Semiconductor 

Transistors

2SB1386 / 2SB1412

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Collector-base breakdown voltage BVCBO −30

Collector-emitter breakdown voltage BVCEO −20

Emitter-base breakdown voltage

BVEBO

−6

Collector cutoff current

ICBO

−

Emitter cutoff current

IEBO

−

Collector-emitter saturation voltage VCE(sat) −

DC current transfer ratio

Transition frequency

Output capacitance

∗ Measured using pulse current.

hFE

82

fT

−

Cob

−

Typ.

−

−

−

−

−

0.35

−

120

60

Max.

−

−

−

−0.5

−0.5

−1.0

390

−

−

Unit

V

V

V

µA

µA

V

−

MHz

pF

Conditions

IC= −50µA

IC= −1mA

IE= −50µA

VCB= −20V

VEB= −5V

IC/IB= −4A/ −0.1A

∗

VCE= −2V, IC= −0.5A

∗

VCE= −6V, IE=50mA, f=100MHz

VCB= −20V, IE=0A, f=1MHz

zPackaging specifications and hFE

Package

Code

Type

2SB1386

Basic ordering

hFE unit (pieces)

PQR

2SB1412 PQR

Taping

T100

TL

1000

2500

−

−

hFE values are classified as follows :

Item

P

Q

R

hFE

82 to 180 120 to 270 180 to 390

Rev.B

2/4

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