Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
部品番号
コンポーネント説明
2SD1719Q データシートの表示(PDF) - Panasonic Corporation
部品番号
コンポーネント説明
メーカー
2SD1719Q
Silicon NPN triple diffusion planar type
Panasonic Corporation
2SD1719Q Datasheet PDF : 4 Pages
1
2
3
4
2SD1719
P
C
T
a
80
(1)T
C
=Ta
(2)With a 50
×
50
×
2mm
Al heat sink
(3)Without heat sink
(P
C
=1.3W)
60
(1)
40
20
(2)
(3)
0
0
40
80
120
160
Ambient temperature T
a
(
°
C)
I
C
V
CE
6
T
C
=25˚C
5
I
B
=10mA
4
9mA
8mA
7mA
3
6mA
5mA
4mA
2
3mA
2mA
1
1mA
0
0 2 4 6 8 10 12
Collector-emitter voltage V
CE
(V)
V
CE(sat)
I
C
10
I
C
/I
B
=50
1
T
C
=100˚C
25˚C
–25˚C
0.1
0.01
0.1
1
10
Collector current I
C
(A)
V
BE(sat)
I
C
10
I
C
/I
B
=50
1
T
C
=–25˚C
100˚C
25˚C
0.1
h
FE
I
C
10
5
V
CE
=4V
10
4
T
C
=100˚C
10
3
25˚C
–25˚C
10
2
1000
100
10
1
f
T
I
C
V
CE
=12V
f=10MHz
T
C
=25˚C
0.01
0.01
1
10
Collector current I
C
(A)
10
0.01
0.1
1
10
Collector current I
C
(A)
0.1
0.01
0.1
1
10
Collector current I
C
(A)
C
ob
V
CB
10
4
I
E
=0
f=1MHz
T
C
=25˚C
10
3
10
2
10
t
on
, t
stg
, t
f
I
C
100
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=50
(I
B1
=–I
B2
)
V
CC
=50V
10
T
C
=25˚C
t
stg
1
t
f
t
on
0.1
Safe operation area
100
Non repetitive pulse
T
C
=25˚C
I
CP
10
I
C
t=1ms
t=10ms
1
t=300ms
0.1
1
0.1
1
10
100
Collector-base voltage V
CB
(V)
0.01
0
2
4
6
8
Collector current I
C
(A)
0.01
1
10
100
1000
Collector-emitter voltage V
CE
(V)
2
SJD00212AED
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]