2SB1386 データシートの表示（PDF） - Willas Electronic Corp.

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2SB1386

SOT-89 Plastic-Encapsulate Transistors

Willas Electronic Corp. 

WILLAS

FM120-M+

2SB1386 THRU

SO1.T0A-8SU9RFPAlCaEsMtOicUN-ET SnCcHaOpTTsKuY BlaAtReRIETRrRaEnCsTIiFsIEtRoSr-s20V- 200V

FM1200-M+

Typical ChSOarDa-1c2t3e+risPAitCicKsAGE

Pb Free Product

Fe-1.5 atures Static Characteristic

• BatcChOpMMroOcNess design, excellent power dissipation offers

betteEMr IrTeTEvRerse leakage current and thermal resistance.

•

L-1o.2 w

Ta=25℃

profile

surface

mounted

application

in

-4mA

order

to

-3.6mA

optimize board space.

• Low power loss, high efficiency.

-3.2mA

•

-0.9

High

current

capability,

low

forward

voltage

d-2r.8ompA.

• High surge capability.

-2.4mA

• G-0.6uardring for overvoltage protection.

-2mA

• Ultra high-speed switching.

-1.6mA

• Silicon epitaxial planar chip, metal silicon jun-1c.2tmioAn.

-0.3

• Lead-free parts meet environmental standar-d0.s8moAf

MIL-STD-19500 /228

I =-0.4mA

B

• R-0.o0HS product for packing code suffix "G"

Ha-l0ogen free produc-1t for packing cod-e2 suffix "H"

-3

COLLECTOR-EMITTER VOLTAGE V (V)

Mechanical data

CE

• E-0.p8 oxy : UL94-V0 raVteCEdsaft la—m—e retaICrdant

• Caseβ=:40Molded plastic, SOD-123H

,

• Terminals :Plated terminals, solderable per MIL-STD-750

-0.6

Method 2026

Package ou hFE tl—in—eIC

500

TaS=O10D0℃-123H

400

Ta=25℃

0.146(3.7)

300

0.130(3.3)

200

100

0

-1E-3

-1.6

β=40

-0.01

-0.1

COLLECTOR CURRENT I (A)

C

VBEsat —— IC

0.031(0.8) Typ.

-1.2

V =-2V

CE

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

-1

-3

0.040(1.0)

0.024(0.6)

0.031(0.8) Typ.

• Polarity : Indicated by cathode band

Dimensions in inches and (millimeters)

• M-0.4ounting Position : Any

Ta=25℃

-0.8

• Weight : Approximated 0.011 gram

Ta=100℃

-0.2 MAXIMUM RATINGS AND ELECTRICAL CHAR-0A.4 CTERISTICS

Ta=100℃

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase half wave, 60Hz, resistive of inductive loaTda=. 25℃

For capac-0i.t-01ivE-e3 load, dera-t0e.01current by 2-00.1%

-1

-5

-0.0

-1E-3

-0.01

-0.1

-1

-5

RATCINOGLLSECTOR CURRENT

I

C

(A) SYMBOL FM120-MH FM130-MH FM140-MH FM1C5O0L-LMEHCTFOMR1C60U-RMRHENFTM1IC80-(MA)H FM1100-MH FM1150-MH FM1200-MH

Marking Code

IC —— VBE

Maximum R-e5 current Peak Reverse Voltage

12

VRRM

20

Maximum RMS Voltage

Maximum D-C1 Blocking Voltage

VRMS

14

VDC

20

Maximum Average Forward Rectified Current

IO

Ta=100℃

Ta=25℃

Peak Forwa-0r.d1 Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

IFSM

13

14

301000

40

21

28

30

40

100

1C5ob/ Cib —16—

50

60

VCB/1V8EB

80

35

42

56

50

60C

80

ib

1.0

C

ob

30

10

100

f=1MHz

IE7=00/

I =0

C

Ta=25℃

100

115

150

105

150

120

200

140

200

Typical Thermal Resistance (Note 2)

Typical Ju-n0.c01tion Capacitance (Note 1)

Operating Temperature Range

Storage Temperature Range

-1E-3

-0.2

CHA-0.R4 ACTERI-S0.6TICS -0.8

BASE-EMMITER VOLTAGE V

Maximum Forward Voltage at 1.0A DC

BE

RΘJA

40

CJ

TJ

-55 to +125

120

-55 to +150

TSTG

- 65 to +175

V =-2V

CE

10

-1.0

-1.2

-0.1

-1

-10

-20

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH

(V)

REVERSE VOLTAGE V (V)

VF

0.50

0.70

0.85

0.9

0.92

Maximum Average Reverse CurrePnct at —@—T AT=a25℃

1.0

IR

0.5

Rated DC Blocking Voltage

@T A=125℃

10

NOTES: 0.8

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

2- Thermal Resistance From Junction to Ambient

0.6

0.4

0.2

2012-00.0 6

0

25

50

75

100

125

150

AMBIENT TEMPERATURE Ta (℃)

2012-0

WILLAS ELECTRONIC CORP

WILLAS ELECTRONIC CORP.

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