TISP3240F3 データシートの表示（PDF） - Bourns, Inc

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TISP3240F3

HIGH-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

Bourns, Inc 

TISP3xxxF3 (HV) Overvoltage Protector Series

Description (continued)

These monolithic protection devices are fabricated in ion implanted planar structures to ensure precise and matched breakover control

and are virtually transparent to the system in normal operation.

Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)

Rating

Repetitive peak off-state voltage, 0 °C < TA < 70 °C

‘3240F3

‘3260F3

‘3290F3

‘3320F3

‘3380F3

Non-repetitive peak on-state pulse current (see Notes 1 and 2)

1/2 (Gas tube differential transient, 1/2 voltage wave shape)

2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)

1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 Ω resistor)

8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)

10/160 (FCC Part 68, 10/160 voltage wave shape)

4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)

0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)

5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)

5/320 (FCC Part 68, 9/720 voltage wave shape, single)

10/560 (FCC Part 68, 10/560 voltage wave shape)

10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)

Non-repetitive peak on-state current, 0 °C < TA < 70 °C (see Notes 1 and 3)

50 Hz, 1 s

D Package

SL Package

Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A

Junction temperature

Storage temperature range

Symbol

VDRM

IPPSM

ITSM

diT/dt

TJ

Tstg

Value

Unit

±180

±200

±220

V

±240

±270

350

175

90

120

60

55

38

50

50

45

35

4.3

7.1

250

-65 to +150

-65 to +150

A

A

A/µs

°C

°C

NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.

2. Initially, the TISP® device m ust be in thermal equilibrium with 0 °C < TJ <70 °C. The surge may be repeated after the TISP® device

returns to its initial conditions.

3. Above 70 °C, derate linearly to zero at 150 °C lead temperature.

Electrical Characteristics for R and T Terminal Pair, TA = 25 °C (Unless Otherwise Noted)

IDRM

ID

Coff

Parameter

Repetitive peak off-

state current

Off-state current

Off-state capacitance

Test Conditions

VD = ±2VDRM, 0 °C < TA < 70 °C

VD = ±50 V

f = 100 kHz, Vd = 100 mV , VD = 0,

Third terminal voltage = -50 V to +50 V

(see Notes 4 and 5)

Min Typ Max Unit

±10

µA

±10

µA

D Package

SL Package

0.05 0.15

pF

0.03 0.1

NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is

connected to the guard terminal of the bridge.

5. Further details on capacitance are given in the Applications Information section.

MARCH 1994 - REVISED MARCH 2006

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

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