MPSA06
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Capacitance
80
60
TJ=25°С
40
Cibo
20
10
8.0
6.0
4.0
0.1
Cobo
0.5 1.0 5.0 10 50 100
Reverse Voltage, VR (Volts)
Active-Region Safe Operating Area
1.0k
700
100µs
500
300
TC=25°С 1.0s
200
TA=25°С
100
70
50
Current Limit
30
Thermal Limit
20
Second Breakdown
Limit
10
1.0 2.0 5.0 10
50 100
Collector-Emitter Voltage, VCE (Volts)
“On” Voltages
1.0 TJ=25°С
0.8
VBE(SAT) @ IC/IB=10
0.6
VBE(ON) @ VCE=1.0V
0.4
0.2
VCE(ON) @ IC/IB=10
0
0.5 1.0
5.0 10
50 100 500
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-035.C