2SC1815_07 データシートの表示（PDF） - Toshiba

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2SC1815_07

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Toshiba 

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC1815

Audio Frequency General Purpose Amplifier Applications

Driver Stage Amplifier Applications

2SC1815

Unit: mm

High voltage and high current:

VCEO = 50 V (min),

IC = 150 mA (max)

• Excellent hFE linearity: hFE (2) = 100 (typ.)

at VCE = 6 V, IC = 150 mA

: hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

= 0.95 (typ.)

• Low noise: NF = 1dB (typ.) at f = 1 kHz

• Complementary to 2SA1015 (O, Y, GR class)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

60

V

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

VEBO

5

V

Collector current

Base current

Collector power dissipation

IC

150

mA

IB

50

mA

JEDEC

TO-92

PC

400

mW

JEITA

SC-43

Junction temperature

Storage temperature range

Tj

125

°C

Tstg

−55~125

°C

TOSHIBA

2-5F1B

Weight: 0.21 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Base intrinsic resistance

Noise figure

Symbol

Test Condition

ICBO

VCB = 60 V, IE = 0

IEBO

VEB = 5 V, IC = 0

hFE (1)

VCE = 6 V, IC = 2 mA

(Note)

hFE (2) VCE = 6 V, IC = 150 mA

VCE (sat) IC = 100 mA, IB = 10 mA

VBE (sat) IC = 100 mA, IB = 10 mA

fT

VCE = 10 V, IC = 1 mA

Cob

VCB = 10 V, IE = 0, f = 1 MHz

VCE = 10 V, IE = −1 mA

rbb’

f = 30 MHz

VCE = 6 V, IC = 0.1 mA

NF

f = 1 kHz, RG = 10 kΩ

Min Typ. Max Unit

⎯

⎯

0.1

μA

⎯

⎯

0.1

μA

70

⎯

700

25 100 ⎯

⎯

0.1 0.25

V

⎯

⎯

1.0

V

80

⎯

⎯ MHz

⎯

2.0

3.5

pF

⎯

50

⎯

Ω

⎯

1.0

10

dB

Note: hFE classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700

1

2007-11-01

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