BC617 データシートの表示（PDF） - Infineon Technologies

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BC617

NPN Silicon Darlington Transistors

Infineon Technologies 

BC 617

BC 618

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 10 mA

BC 617

BC 618

Collector-base breakdown voltage

IC = 100 µA

BC 617

BC 618

Emitter-base breakdown voltage

IE = 10 µA

Collector cutoff current

VCB = 40 V

VCB = 60 V

VCB = 40 V, TA = 150 ˚C

VCB = 60 V, TA = 150 ˚C

BC 617

BC 618

BC 617

BC 618

Emitter cutoff current

VEB = 4 V

DC current gain

IC = 100 µA; VCE = 5 V

IC = 10 mA; VCE = 5 V1)

IC = 200 mA; VCE = 5 V1)

IC = 1000 mA; VCE = 5 V1)

BC 617

BC 618

BC 617

BC 618

BC 617

BC 618

BC 617

BC 618

Collector-emitter saturation voltage1)

IC = 200 mA; IB = 0.2 mA

Base-emitter saturation voltage1)

IC = 200 mA; IB = 0.2 mA

Symbol

Values

Unit

min. typ. max.

V(BR)CE0

40

–

55

–

V(BR)CB0

50

–

80

–

V(BR)EB0 12

–

ICB0

–

–

–

–

–

–

–

–

IEB0

–

–

hFE

VCEsat

4000 –

2000 –

10000 –

4000 –

20000 –

10000 –

10000 –

4000 –

–

–

VBEsat

–

–

V

–

–

–

–

–

100 nA

100 nA

10

µA

10

µA

100 nA

–

–

–

–

–

70000

50000

–

–

1.1 V

1.6

1) Pulse test: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group

2

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