BD909 データシートの表示（PDF） - Inchange Semiconductor
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BD909 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BD909 BD911
DESCRIPTION
·
·With TO-220C package
·Complement to type BD910 BD912
APPLICATIONS
·Intented for use in power linear
and switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
BD909
BD911
VCEO
Collector-emitter voltage
BD909
BD911
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC≤25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
80
100
80
100
5
15
5
90
150
-65~150
UNIT
V
V
V
A
A
W
℃
℃
MAX
1.4
UNIT
℃/W
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