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BUZ21 データシートの表示(PDF) - Infineon Technologies
部品番号
コンポーネント説明
メーカー
BUZ21
SIPMOS ® Power Transistor
Infineon Technologies
BUZ21 Datasheet PDF : 8 Pages
1
2
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5
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7
8
BUZ 21
Avalanche energy
E
AS
=
ƒ
(
T
j
)
parameter:
I
D
= 21 A,
V
DD
= 25 V
R
GS
= 25
Ω
,
L
= 340 µH
110
mJ
E
AS
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 ˚C 160
T
j
Drain-source breakdown voltage
V
(BR)DSS
=
ƒ
(
T
j
)
Typ. gate charge
V
GS
=
ƒ
(
Q
Gate
)
parameter:
I
D puls
= 36 A
16
V
V
GS
12
10
0,2
V
DS max
0,8
V
DS max
8
6
4
2
0
0 10 20 30 40 50 nC 70
Q
Gate
120
V
116
V
(BR)DSS
114
112
110
108
106
104
102
100
98
96
94
92
90
-60
-20
20
60
100 ˚C 160
T
j
Data Sheet
8
05.99
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