2SB1502 データシートの表示（PDF） - Inchange Semiconductor
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2SB1502 Datasheet PDF : 2 Pages
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isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
2SB1502
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -4mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -4A; IB= -4mA
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
ICEO
Collector Cutoff Current
VCE= -100V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
hFE-2
DC Current Gain
IC= -4A; VCE= -5V
fT
Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -4A; IB1= -IB2= -4mA,
VCC= -50V
MIN TYP. MAX UNIT
-100
V
-2.5
V
-3.0
V
-100 μA
-100 μA
-100 μA
2000
5000
30000
20
MHz
1.0
μs
0.8
μs
1.0
μs
hFE-2 Classifications
Q
S
P
5000-15000 7000-21000 8000-30000
isc website：www.iscsemi.com
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