BSS110E6325 データシートの表示（PDF） - Infineon Technologies
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BSS110E6325 Datasheet PDF : 7 Pages
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BSS 110
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
-0.38
Ptot = 1W
A
l
k
j
i
-0.32
ID
-0.28
VGS [V]
h a -2.0
b -2.5
c -3.0
-0.24
d -3.5
e -4.0
-0.20
f -4.5
g
g -5.0
-0.16
-0.12
-0.08
h -6.0
f i -7.0
j -8.0
k -9.0
e
l -10.0
d
c
-0.04
b
0.00
a
0.0 -1.0 -2.0 -3.0 -4.0 -5.0 V -6.5
VDS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
32
ab c
d
e
f
Ω
RDS (on)
24
20
16
12
8
g
h
ij
4 VGS [V] =
abcdef
-23.05 -3.5 -4.0 -4.5 -5.0 -6.0
0
ghi j
-7.0 -8.0 -9.0 -10.0
0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24 -0.28 A -0.34
ID
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 µs
VDS≥ 2 x ID x RDS(on)max
-0.9
A
ID -0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0 -1 -2 -3 -4 -5 -6 -7 -8 V -10
VGS
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
0.16
S
gfs
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 A -0.8
ID
Semiconductor Group
6
12/05/1997
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