FDA24N50 データシートの表示（PDF） - Fairchild Semiconductor

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FDA24N50

N-Channel UniFET™ MOSFET500 V, 24 A, 190f㏁

Fairchild Semiconductor 

FDA24N50

N-Channel UniFETTM MOSFET

500 V, 24 A, 190 m

Features

• RDS(on) = 160 m (Typ.) @ VGS = 10 V, ID = 12 A

• Low Gate Charge ( Typ. 65 nC)

• Low Crss (Typ. 35 pF)

• 100% Avalanche Tested

• RoHS Compliant

Applications

• PDP TV

• Uninterruptible Power Supply

• AC-DC Power Supply

March 2013

Description

UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage

MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to

provide better switching performance and higher avalanche

energy strength. This device family is suitable for switching

power converter applications such as power factor correction

(PFC), flat panel display (FPD) TV power, ATX and electronic

lamp ballasts.

D

G

D

S

TO-3PN

G

S

MOSFET Maximum Ratings TC = 25oC unless otherwise noted

Symbol

VDSS

VGSS

ID

IDM

EAS

IAR

EAR

dv/dt

PD

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Drain Current

- Continuous (TC = 25oC)

- Continuous (TC = 100oC)

- Pulsed

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

(TC = 25oC)

- Derate above 25oC

TJ, TSTG

TL

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Thermal Characteristics

Symbol

RJC

RJA

Parameter

Thermal Resistance, Junction to Case, Max.

Thermal Resistance, Junction to Ambient, Max.

©2008 Fairchild Semiconductor Corporation

1

FDA24N50 Rev. C0

(Note 1)

(Note 2)

(Note 1)

(Note 1)

(Note 3)

FDA24N50

500

±30

24

14

96

1872

24

27

4.5

270

2.2

-55 to +150

300

Unit

V

V

A

A

mJ

A

mJ

V/ns

W

W/oC

oC

oC

FDA24N50

0.46

40

Unit

oC/W

www.fairchildsemi.com

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