2SA1700 データシートの表示（PDF） - Inchange Semiconductor

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2SA1700

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

2SA1700

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCE(sat) Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA

VBE(sat) Base-Emitter Saturation Voltage

IC= -50mA; IB= -5mA

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -10uA; IC= 0

ICBO

Collector Cutoff Current

VCB= -300V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -4V; IC= 0

hFE

DC Current Gain

IC= -50mA; VCE= -10V

fT

Current-Gain—Bandwidth Product IC= -10mA; VCE= -30V

MIN TYP. MAX UNIT

-0.8 V

1.0

V

-400

V

-5

V

-0.1 μA

-0.1 μA

60

200

70

MHz

 hFE Classifications

D

E

60-120 100-200

isc website：www.iscsemi.com

2 isc & iscsemi is registered trademark

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