BSR30 データシートの表示（PDF） - NXP Semiconductors.
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BSR30 Datasheet PDF : 7 Pages
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NXP Semiconductors
PNP medium power transistors
Product data sheet
BSR30; BSR31; BSR33
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VCBO
collector-base voltage
BSR30; BSR31
BSR33
VCEO
collector-emitter voltage
BSR30; BSR31
BSR33
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
MIN.
MAX.
UNIT
−
−70
V
−
−90
V
−
−60
V
−
−80
V
−
−5
V
−
−1
A
−
−2
A
−
−200
mA
−
1.35
W
−65
+150
°C
−
150
°C
−65
+150
°C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
Rth(j-s)
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
93
K/W
13
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
2004 Dec 13
3
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