MTP2N18 データシートの表示（PDF） - New Jersey Semiconductor

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MTP2N18

N-Channel Power MOSFETs, 3.5 A, 150-200 V

New Jersey Semiconductor 

IRF610-613

MTP2N18/2N20

Electrical Characteristics (Cont.) (Tc - 25°C unless otherwise noted)

Symbol

Characteristic

Typ

Max

Unit

Source-Drain Diode Characteristics

VSD

Diode Forward Voltage

IRF610/611

2.0

V

IRF612/613

1.8

V

tir

Reverse Recovery Time

290

ns

Holes

1. Tj-+25'C to +150'C

2. Pulse test Pulse width < SO Its, Only cycle <1%

3. Switching time measurements performed en LEM TR-5B tast equipmGnl

Test Conditions

Is = 2.5 A; VGS = 0 V

ls - 2.0 A: VGS - 0 V

ls = 2.5 A; dls/dt = 25 A//jS

Typical Performance Curves

Figure 1 Output Characteristics

5

Figure 2 Static Drain to Source Resistance

vs Drain Current

0

1

4

6

I

10

Vj,—DRAIN TO SOURCE VOLTAQE-V

PCll44flf

Figure 3 Transfer Characteristics

7

<l

1*

V10

\-n>s

\

i*

i 4s <7 a«

vM-OATe TO SOURCE VOLTAOB-V

1

2

3

4

ID—DRAIN CURRENT—A

Figure 4 Temperature Variation of Gate to

Source Threshold Voltage

I0-1.0mA

I"

§ c'fl

1 0.7

z

0

Tj-JUNCTION TEMPERATURE—*C

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