MCR08BT1 Series
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted, RGK = 1 KΩ)
Characteristic
Symbol
Min Typ Max Unit
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, RGK = 1000 Ω)
TJ = 25°C
TJ = 110°C
Maximum On-State Voltage (Either Direction)*
(IT = 1.0 A Peak, TA = 25°C)
Gate Trigger Current (Continuous dc)
(Anode Voltage = 7.0 Vdc, RL = 100 Ω)
Holding Current
(VD = 7.0 Vdc,
Initializing Current = 20 mA, RGK = 1000 Ω)
Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 7.0 Vdc, RL = 100 Ω)
Critical Rate-of-Rise of Off State Voltage
(Vpk = Rated VDRM, TC = 110°C, RGK = 1000 Ω, Exponential Method)
* Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
IDRM, IRRM
—
—
VTM
—
IGT
—
IH
—
—
10
µA
—
200
µA
—
1.7
Volts
—
200
µA
—
5.0
mA
VGT
dv/dt
—
—
0.8
Volts
10
—
—
V/µs
0.984
25.0
0.15
3.8
0.079
2.0
0.079
2.0
0.091 0.091
2.3 2.3
0.244
6.2
0.059 0.059 0.059 ǒinmchmesǓ
1.5 1.5 1.5
BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR.
BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL.
MATERIAL: G10 FIBERGLASS BASE EPOXY
0.096
2.44
0.096
2.44
0.096
2.44
0.059
1.5
0.059
1.5
0.472
12.0
Figure 1. PCB for Thermal Impedance and
Power Testing of SOT-223
2
Motorola Thyristor Device Data