MJD2955T4(1998) データシートの表示（PDF） - STMicroelectronics
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MJD2955T4 Datasheet PDF : 6 Pages
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MJD2955 / MJD3055
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Rthj- amb Thermal Resistance Junction-ambient
Max
Max
6.25
100
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICEX Collect or Cut-off
Cu r re nt
VCB = 70 V VBE = -1.5V
VCB = 70 V VBE = -1.5V Tj = 150 oC
ICBO
ICEO
IEBO
VCEO(sus)
Collector Cut-off
Current (IE = 0)
Collector Cut-off
Current (IB = 0)
Emitter Cut-off Current
(IC = 0)
Co lle ct or- Em it t er
Sustaining Voltage
VCB = 70 V
VCB = 70 V
VCB = 30 V
VEB = 5 V
IC = 30 mA
Tj = 150 oC
VCE(sat )∗
V BE(o n )∗
Co lle ct or- Em it t er
Saturation Voltage
Base-Emitter Voltage
IC = 4 A
IC = 10 A
IC = 4 A
IB = 0.4 A
IB = 3.3 A
VCE = 4 V
hFE∗ DC Current G ain
IC = 4 A
IC = 10 A
fT
DC Current G ain
IC = 0.5 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP type voltage and current values are negative.
VCE = 4 V
VCE = 4 V
VCE = 10 V f = 500 KHz
Min.
60
20
5
2
Typ .
M a x.
0.2
2
0.2
2
50
0.5
1.1
8
1.8
100
Unit
µA
µA
µA
µA
µA
mA
V
V
V
MHz
Safe Operating Area
Derating Curves
2/6
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