AD8531/AD8532/AD8534
ELECTRICAL CHARACTERISTICS (@ VS = +5.0 V, VCM = 2.5 V, TA = +25؇C unless otherwise noted)
Parameter
Symbol
Conditions
Min Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
VOS
–40°C ≤ TA ≤ +85°C
IB
–40°C ≤ TA ≤ +85°C
IOS
–40°C ≤ TA ≤ +85°C
25
30
5
50
60
1
25
30
0
5
Common-Mode Rejection Ratio
Large Signal Voltage Gain
Offset Voltage Drift
Bias Current Drift
Offset Current Drift
CMRR
AVO
∆VOS/∆T
∆IB/∆T
∆IOS/∆T
VCM = 0 V to 5 V
38 47
RL = 2 kΩ, VO = 0.5 V to 4.5 V 15 80
–40°C ≤ TA ≤ +85°C
20
50
20
mV
mV
pA
pA
pA
pA
V
dB
V/mV
µV/°C
fA/°C
fA/°C
OUTPUT CHARACTERISTICS
Output Voltage High
Output Voltage Low
Output Current
Closed-Loop Output Impedance
VOH
VOL
IOUT
ZOUT
IL = 10 mA
–40°C ≤ TA ≤ +85°C
IL = 10 mA
–40°C ≤ TA ≤ +85°C
f = 1 MHz, AV = 1
4.9 4.94
V
4.85
V
50
100
mV
125
mV
± 250
mA
40
Ω
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current/Amplifier
PSRR
ISY
VS = 3 V to 6 V
VO = 0 V
–40°C ≤ TA ≤ +85°C
45 55
dB
0.75 1.25
mA
1.75
mA
DYNAMIC PERFORMANCE
Slew Rate
Full-Power Bandwidth
Settling Time
Gain Bandwidth Product
Phase Margin
Channel Separation
SR
BWp
tS
GBP
φo
CS
RL = 2 kΩ
1% Distortion
To 0.01%
f = 1 kHz, RL = 2 kΩ
5
V/µs
350
kHz
1.4
µs
3
MHz
70
Degrees
65
dB
NOISE PERFORMANCE
Voltage Noise Density
en
Voltage Noise Density
en
Current Noise Density
in
Specifications subject to change without notice.
f = 1 kHz
f = 10 kHz
f = 1 kHz
45
nV/√Hz
30
nV/√Hz
0.05
pA/√Hz
REV. B
–3–