2SA1797 データシートの表示（PDF） - MAKO SEMICONDUCTOR CO.,LIMITED

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2SA1797

Plastic-Encapsulate Transistors

MAKO SEMICONDUCTOR CO.,LIMITED 

Plastic-Encapsulate Transistors

FEATURES

• Low saturation voltage

• Excellent DC current gain characteristics

• Complements to 2SC4672

Maximum Ratings (Ta=25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power dissipation

Junction Temperature

Storage Temperature

unless otherwise noted)

Symbol

Value

VCBO

-50

VCEO

-50

VEBO

-6

IC

-2

PC

0.5

TJ

150

Tstg

-55to +150

Unit

V

V

V

A

W

ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)

Parameter

Symbol

Test conditions

Collector-base breakdown voltage

VCBO

IC=-50μA, IE=0

Collector-emitter breakdown voltage

VCEO

IC=-1mA, IB=0

Emitter-base breakdown voltage

VEBO

IE=-50μA, IC=0

Collector cut-off current

ICBO VCB=-50V, IE=0

Emitter cut-off current

IEBO

VEB=-5V, IC=0

DC current gain

hFE

VCE=-2V, IC=-500mA

Collector-emitter saturation voltage

VCE(sat) IC=-1A, IB=-50mA

Transition frequency

fT

VCE=-2V, IC=-0.5A, f=100MHz

Collector output capacitance

Cob VCB=-10V, IE=0, f=1MHz

2SA1797 (PNP)

1. BASE

2. COLLECTO

3. EMITTER

SOT-89

Min Typ Max Unit

-50

V

-50

V

-6

V

-0.1 μA

-0.1 μA

82

270

-0.35

V

200

MHz

36

pF

CLASSIFICATION OF hFE

Rank

Range

Marking

P

80-180

AGP

Q

120-270

AGQ

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/

Page:P2-P1

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