BUL742C(2003) データシートの表示（PDF） - STMicroelectronics
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BUL742C Datasheet PDF : 7 Pages
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BUL742C
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
1.79
°C/W
Max
62.5
°C/W
ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
ICES
Collector Cut-off
Current (VBE = 0)
VCE = 1050 V
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 400 V
V(BR)EBO Emitter-Base
IE = 1 mA
12
Breakdown Voltage
(IC = 0)
VCEO(sus)* Collector-Emitter
IC = 10 mA
400
Sustaining Voltage
(IB = 0)
VCE(sat)* Collector-Emitter
Saturation Voltage
IC = 1 A
IC = 3.5 A
IB = 0.2 A
IB = 1 A
VBE(sat)* Base-Emitter
Saturation Voltage
IC = 3.5 A
IB = 1 A
hFE* DC Current Gain
IC = 0.1 A
VCE = 5 V
48
IC = 0.8 A
VCE = 3 V
25
RESISTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 2 A
IB1 = -IB2 = 400 mA
VBB(off) = -5 V
VCC = 125 V
tp = 300 µs
(See Figure 1)
Ear
Repetitive Avalanche L = 2 mH
Energy
VBE = -5 V
C = 1.8 nF
6
(See Figure 2)
* Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %.
Typ.
2.4
350
Max.
100
250
24
0.5
1.5
1.5
100
50
Unit
µA
µA
V
V
V
V
V
µs
ns
mJ
2/7
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