FS10SM-10(2003) データシートの表示（PDF） - Renesas Electronics
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FS10SM-10 Datasheet PDF : 5 Pages
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ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
40
TC = 25°C
Pulse Test
32
24
ID = 15A
16
10A
8
5A
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
TC = 25°C
VDS = 50V
16
Pulse Test
12
8
4
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
Ciss
103
7
5
3
2
102
Coss
7
5
3
2
Crss
101
7
5
Tch = 25°C
f = 1MHz
VGS = 0V
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS10SM-10
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
2.0
TC = 25°C
Pulse Test
1.6
VGS = 10V
20V
1.2
0.8
0.4
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
101
7
VDS = 10V
Pulse Test
5
TC=25°C
3
75°C
2
150°C
100
7
5
3
2
10–1
10–1 2 3 5 7 100 2 3 5 7 101
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
Tch = 25°C
VDD = 200V
5
VGS = 10V
RGEN = RGS = 50Ω
3
2
102
td(off)
7
5
tf
3
tr
2
td(on)
101
10–1 2 3 5 7 100 2 3 5 7 101
DRAIN CURRENT ID (A)
Feb.1999
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