2SD882 データシートの表示（PDF） - Unisonic Technologies

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2SD882

NPN SILICON TRANSISTOR

Unisonic Technologies 

2SD882

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified )

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Dissipation (Ta=25℃)

DC

Pulse

TO-92NL

TO-251/TO-252/

TO-126/TO-126C

SYMBOL

VCBO

VCEO

VEBO

IC

ICP

IB

PC

RATINGS

40

30

5

3

7

0.6

0.5

1

UNIT

V

V

V

A

A

A

W

W

Junction Temperature

TJ

+150

℃

Storage Temperature

TSTG

-55 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector-Base Breakdown Voltage

BVCBO IC=100μA, IE=0

Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0

Emitter-Base Breakdown Voltage

Collector Cut-off Current

BVEBO IE=100μA, IC=0

ICBO VCB=30V, IE=0

Emitter Cut-off Current

IEBO VEB=3V, IC=0

DC Current Gain (Note 1)

hFE1

hFE2

VCE=2V, IC=20mA

VCE=2V, IC=1A

Collector-Emitter Saturation Voltage

VCE(SAT) IC=2A, IB=0.2A

Base-Emitter Saturation Voltage

VBE(SAT) IC=2A, IB=0.2A

Current Gain Bandwidth Product

fT

VCE=5V, IC=0.1A

Output Capacitance

Cob VCB=10V, IE=0, f=1MHz

Note 1: Pulse test: PW<300μs, Duty Cycle<2%

„ CLASSIFICATION OF hFE2

RANK

RANGE

Q

100-200

P

160-320

MIN TYP MAX UNIT

40

V

30

V

5

V

1000 nA

1000 nA

30 200

100 150 400

0.3 0.5

V

1.0 2.0

V

80

MHz

45

pF

E

200-400

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R209-003.D

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