2SD882 データシートの表示（PDF） - SavantIC Semiconductor
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2SD882 Datasheet PDF : 4 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=2.0A; IB=0.2A
VBEsat
Base-emitter saturation voltage
IC=2.0A ;IB=0.2A
ICBO
Collector cut-off current
VCB=30V; IE=0
IEBO
Emitter cut-off current
VEB=3V; IC=0
hFE-1
DC current gain
IC=20mA ; VCE=2V
hFE-2
DC current gain
IC=1A ; VCE=2V
fT
Transition frequency
IC=0.1A ; VCE=5V
COB
Collector output capacitance
f=1MHz ; VCB=10V
hFE-2 Classifications
R
Q
P
E
60-120 100-200 160-320 200-400
Product Specification
2SD882
MIN TYP. MAX UNIT
30
V
0.5
V
2.0
V
1
µA
1
µA
30
60
400
90
MHz
45
pF
2
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